Datasheet | IS61LPS25636A-200B2I-TR |
File Size | 2,595.04 KB |
Total Pages | 35 |
Manufacturer | ISSI, Integrated Silicon Solution Inc |
Website | |
Total Parts | This datasheet covers 22 part numbers |
Associated Parts | IS61LPS25636A-200B2I-TR, IS61LPS25636A-200B2I, IS61LPS25636A-200B3I-TR, IS61LPS25636A-200B3I, IS64LPS25636A-166TQLA3, IS64LPS25636A-166TQLA3-TR, IS61LPS51218A-200TQI, IS61LPS25636A-200TQ2I, IS61LPS25636A-200TQI, IS61LPS25636A-200B3LI, IS61VPS25636A-200TQLI, IS61LPS51218A-200TQLI, IS61LPS25636A-200TQ2LI, IS61LPS51218A-200TQI-TR, IS61LPS25636A-200TQ2I-TR, IS61LPS25636A-200TQI-TR, IS61LPS25636A-200B3LI-TR, IS61VPS25636A-200TQLI-TR, IS61LPS51218A-200TQLI-TR, IS61LPS25636A-200TQ2LI-TR, IS61LPS25636A-200TQLI-TR, IS61LPS25636A-200TQLI |
Description | IC SRAM 9M PARALLEL 119PBGA, IC SRAM 9M PARALLEL 119PBGA, IC SRAM 9M PARALLEL 165TFBGA, IC SRAM 9M PARALLEL 165TFBGA, IC SRAM 9M PARALLEL 100TQFP |
IS61LPS25636A-200B2I-TR - ISSI, Integrated Silicon Solution Inc
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ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 119-BBGA Supplier Device Package 119-PBGA (14x22) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 119-BBGA Supplier Device Package 119-PBGA (14x22) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-TFBGA (13x15) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-TFBGA (13x15) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.5ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 125°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.5ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 125°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-TFBGA (13x15) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
ISSI, Integrated Silicon Solution Inc Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.1ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |