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| Datasheet | ISL9R8120S3ST |
| File Size | 145.31 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | ISL9R8120S3ST, ISL9R8120P2 |
| Description | DIODE GEN PURP 1.2KV 8A TO263, DIODE GEN PURP 1.2KV 8A TO220-2L |
ISL9R8120S3ST - ON Semiconductor
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Manufacturer ON Semiconductor Series Stealth™ Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 3.3V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 300ns Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F 30pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer ON Semiconductor Series Stealth™ Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 3.3V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 300ns Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F 30pF @ 10V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2L Operating Temperature - Junction -55°C ~ 150°C |