![IXBH42N170 Cover](http://media.oemstron.com/oemstron/datasheet/sm/ixbh42n170-0001.jpg)
Datasheet | IXBH42N170 |
File Size | 175.74 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IXBH42N170, IXBT42N170 |
Description | IGBT 1700V 80A 360W TO247, IGBT 1700V 80A 360W TO268 |
IXBH42N170 - IXYS
![IXBH42N170 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/ixbh42n170-0001.jpg)
![IXBH42N170 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/ixbh42n170-0002.jpg)
![IXBH42N170 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/ixbh42n170-0003.jpg)
![IXBH42N170 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/ixbh42n170-0004.jpg)
![IXBH42N170 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/ixbh42n170-0005.jpg)
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URL Link
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A Power - Max 360W Switching Energy - Input Type Standard Gate Charge 188nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.32µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (IXBH) |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A Power - Max 360W Switching Energy - Input Type Standard Gate Charge 188nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.32µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |