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IXBX75N170A Datasheet

IXBX75N170A Cover
DatasheetIXBX75N170A
File Size184.31 KB
Total Pages6
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXBX75N170A, IXBK75N170A
Description IGBT 1700V 110A 1040W PLUS247, IGBT 1700V 110A 1040W TO264

IXBX75N170A - IXYS

IXBX75N170A Datasheet Page 1
IXBX75N170A Datasheet Page 2
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IXBX75N170A Datasheet Page 6

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URL Link

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

110A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 42A

Power - Max

1040W

Switching Energy

3.8mJ (off)

Input Type

Standard

Gate Charge

358nC

Td (on/off) @ 25°C

26ns/418ns

Test Condition

1360V, 42A, 1Ohm, 15V

Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

110A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 42A

Power - Max

1040W

Switching Energy

3.8mJ (off)

Input Type

Standard

Gate Charge

358nC

Td (on/off) @ 25°C

26ns/418ns

Test Condition

1360V, 42A, 1Ohm, 15V

Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264