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| Datasheet | IXCY01N90E |
| File Size | 115.44 KB |
| Total Pages | 3 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXCY01N90E, IXCP01N90E |
| Description | MOSFET N-CH 900V 0.25A TO-252, MOSFET N-CH 900V 0.25A TO-220 |
IXCY01N90E - IXYS
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 250mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80Ohm @ 50mA, 10V Vgs(th) (Max) @ Id 5V @ 25µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 133pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 250mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80Ohm @ 50mA, 10V Vgs(th) (Max) @ Id 5V @ 25µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 133pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |