Datasheet | IXFA34N65X2 |
File Size | 204.45 KB |
Total Pages | 6 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXFA34N65X2, IXFH34N65X2, IXFP34N65X2 |
Description | MOSFET N-CH 650V 34A TO-263, MOSFET N-CH 650V 34A TO-247, MOSFET N-CH 650V 34A TO-220 |
IXFA34N65X2 - IXYS
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IXFA34N65X2 | IXYS | MOSFET N-CH 650V 34A TO-263 | 224 More on Order |
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IXFH34N65X2 | IXYS | MOSFET N-CH 650V 34A TO-247 | 310 More on Order |
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IXFP34N65X2 | IXYS | MOSFET N-CH 650V 34A TO-220 | 412 More on Order |
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IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 17A, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3330pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AA Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 17A, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3330pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 17A, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3330pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |