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| Datasheet | IXFB82N60P |
| File Size | 101.85 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFB82N60P |
| Description | MOSFET N-CH 600V 82A PLUS 264 |
IXFB82N60P - IXYS
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IXFB82N60P | IXYS | MOSFET N-CH 600V 82A PLUS 264 | 220 More on Order |
URL Link
www.oemstron.com/datasheet/IXFB82N60P
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Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 82A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA |