Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFC12N80P |
| File Size | 202.01 KB |
| Total Pages | 2 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFC12N80P |
| Description | MOSFET N-CH 800V 7A ISOPLUS220 |
IXFC12N80P - IXYS
The Products You May Be Interested In
 |
IXFC12N80P | IXYS | MOSFET N-CH 800V 7A ISOPLUS220 | 342 More on Order |
URL Link
www.oemstron.com/datasheet/IXFC12N80P
|
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 930mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |