Semiconductors
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| Datasheet | IXFC30N60P |
| File Size | 135.86 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXFC30N60P, IXFR30N60P |
| Description | MOSFET N-CH 600V 15A ISOPLUS220, MOSFET N-CH 600V 15A ISOPLUS247 |
IXFC30N60P - IXYS
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IXFC30N60P | IXYS | MOSFET N-CH 600V 15A ISOPLUS220 | 305 More on Order |
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IXFR30N60P | IXYS | MOSFET N-CH 600V 15A ISOPLUS247 | 126 More on Order |
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Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 15A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V FET Feature - Power Dissipation (Max) 166W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 15A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V FET Feature - Power Dissipation (Max) 166W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |