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IXFH12N100F Datasheet

IXFH12N100F Cover
DatasheetIXFH12N100F
File Size136.2 KB
Total Pages2
ManufacturerIXYS-RF
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFH12N100F
Description MOSFET N-CH 1000V 12A TO-247AD

IXFH12N100F - IXYS-RF

IXFH12N100F Datasheet Page 1
IXFH12N100F Datasheet Page 2

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IXFH12N100F IXFH12N100F IXYS-RF MOSFET N-CH 1000V 12A TO-247AD 370

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URL Link

IXFH12N100F

IXYS-RF

Manufacturer

IXYS-RF

Series

HiPerRF™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

77nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-3P-3 Full Pack