Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFH36N55Q2 |
| File Size | 556.62 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFH36N55Q2 |
| Description | MOSFET N-CH 550V 36A TO-247 |
IXFH36N55Q2 - IXYS
The Products You May Be Interested In
 |
IXFH36N55Q2 | IXYS | MOSFET N-CH 550V 36A TO-247 | 318 More on Order |
URL Link
www.oemstron.com/datasheet/IXFH36N55Q2
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 550V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |