Datasheet | IXFH60N20 |
File Size | 90.95 KB |
Total Pages | 2 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IXFH60N20 |
Description | MOSFET N-CH 200V 60A TO-247 |
IXFH60N20 - IXYS
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IXFH60N20 | IXYS | MOSFET N-CH 200V 60A TO-247 | 398 More on Order |
URL Link
www.oemstron.com/datasheet/IXFH60N20
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 33mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |