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| Datasheet | IXFH8N80 |
| File Size | 206.21 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXFH8N80, IXFH9N80 |
| Description | MOSFET N-CH 800V 8A TO-247, MOSFET N-CH 800V 9A TO-247 |
IXFH8N80 - IXYS
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1Ohm @ 4A, 10V Vgs(th) (Max) @ Id 4.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |