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Datasheet | IXFK100N65X2 |
File Size | 199.28 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IXFK100N65X2, IXFX100N65X2 |
Description | MOSFET N-CH 650V 100A TO-264, MOSFET N-CH 650V 100A PLUS247 |
IXFK100N65X2 - IXYS
![IXFK100N65X2 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/ixfk100n65x2-0001.jpg)
![IXFK100N65X2 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/ixfk100n65x2-0002.jpg)
![IXFK100N65X2 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/ixfk100n65x2-0003.jpg)
![IXFK100N65X2 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/ixfk100n65x2-0004.jpg)
![IXFK100N65X2 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/ixfk100n65x2-0005.jpg)
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URL Link
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 10V Vgs(th) (Max) @ Id 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 Package / Case TO-264-3, TO-264AA |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 10V Vgs(th) (Max) @ Id 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |