Datasheet | IXFL30N120P |
File Size | 123.82 KB |
Total Pages | 4 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IXFL30N120P |
Description | MOSFET N-CH 1200V 18A I5-PAK |
IXFL30N120P - IXYS
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IXFL30N120P | IXYS | MOSFET N-CH 1200V 18A I5-PAK | 200 More on Order |
URL Link
www.oemstron.com/datasheet/IXFL30N120P
IXYS Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 15A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 310nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V FET Feature - Power Dissipation (Max) 357W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUSi5-Pak™ Package / Case ISOPLUSi5-Pak™ |