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IXFL32N120P Datasheet

IXFL32N120P Cover
DatasheetIXFL32N120P
File Size129.81 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFL32N120P
Description MOSFET N-CH 1200V 24A I5-PAK

IXFL32N120P - IXYS

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IXFL32N120P IXFL32N120P IXYS MOSFET N-CH 1200V 24A I5-PAK 215

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URL Link

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

340mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

360nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

21000pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUSi5-Pak™

Package / Case

ISOPLUSi5-Pak™