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IXFL34N100 Datasheet

IXFL34N100 Cover
DatasheetIXFL34N100
File Size116.08 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFL34N100
Description MOSFET N-CH 1000V 30A ISOPLUS264

IXFL34N100 - IXYS

IXFL34N100 Datasheet Page 1
IXFL34N100 Datasheet Page 2

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URL Link

IXFL34N100

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9200pF @ 25V

FET Feature

-

Power Dissipation (Max)

550W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS264™

Package / Case

ISOPLUS264™