Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFN180N25T |
| File Size | 162.95 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFN180N25T |
| Description | MOSFET N-CH 250V 168A SOT-227 |
IXFN180N25T - IXYS
The Products You May Be Interested In
 |
IXFN180N25T | IXYS | MOSFET N-CH 250V 168A SOT-227 | 201 More on Order |
URL Link
www.oemstron.com/datasheet/IXFN180N25T
|
Manufacturer IXYS Series GigaMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 168A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12.9mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 345nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 25V FET Feature - Power Dissipation (Max) 900W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |