Datasheet | IXFN23N100 |
File Size | 108.35 KB |
Total Pages | 4 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IXFN23N100 |
Description | MOSFET N-CH 1000V 23A SOT-227B |
IXFN23N100 - IXYS
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IXFN23N100 | IXYS | MOSFET N-CH 1000V 23A SOT-227B | 309 More on Order |
URL Link
www.oemstron.com/datasheet/IXFN23N100
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 600W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |