Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFN360N10T |
| File Size | 160.86 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFN360N10T |
| Description | MOSFET N-CH 100V 360A SOT-227B |
IXFN360N10T - IXYS
The Products You May Be Interested In
 |
IXFN360N10T | IXYS | MOSFET N-CH 100V 360A SOT-227B | 1740 More on Order |
URL Link
www.oemstron.com/datasheet/IXFN360N10T
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 360A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.6mOhm @ 180A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 505nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 36000pF @ 25V FET Feature - Power Dissipation (Max) 830W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |