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IXFN38N100Q2 Datasheet

IXFN38N100Q2 Cover
DatasheetIXFN38N100Q2
File Size563.82 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN38N100Q2
Description MOSFET N-CH 1000V 38A SOT-227

IXFN38N100Q2 - IXYS

IXFN38N100Q2 Datasheet Page 1
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IXFN38N100Q2 Datasheet Page 3
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URL Link

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7200pF @ 25V

FET Feature

-

Power Dissipation (Max)

890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC