Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFN62N80Q3 |
| File Size | 126.51 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFN62N80Q3 |
| Description | MOSFET N-CH 800V 49A SOT-227 |
IXFN62N80Q3 - IXYS
The Products You May Be Interested In
 |
IXFN62N80Q3 | IXYS | MOSFET N-CH 800V 49A SOT-227 | 504 More on Order |
URL Link
www.oemstron.com/datasheet/IXFN62N80Q3
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 140mOhm @ 31A, 10V Vgs(th) (Max) @ Id 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V FET Feature - Power Dissipation (Max) 960W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |