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IXFN70N120SK Datasheet

IXFN70N120SK Cover
DatasheetIXFN70N120SK
File Size432.49 KB
Total Pages7
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN70N120SK
Description MOSFET N-CH

IXFN70N120SK - IXYS

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URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

68A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

34mOhm @ 50A, 20V

Vgs(th) (Max) @ Id

4V @ 15mA

Gate Charge (Qg) (Max) @ Vgs

161nC @ 20V

Vgs (Max)

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds

2790pF @ 1000V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC