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| Datasheet | IXFQ60N60X |
| File Size | 166.25 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXFQ60N60X, IXFH60N60X |
| Description | MOSFET N-CH 600V 60A TO3P, MOSFET N-CH 600V 60A TO247 |
IXFQ60N60X - IXYS
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 55mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 55mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |