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| Datasheet | IXFR180N10 |
| File Size | 33.22 KB |
| Total Pages | 2 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFR180N10 |
| Description | MOSFET N-CH 100V 165A ISOPLUS247 |
IXFR180N10 - IXYS
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IXFR180N10 | IXYS | MOSFET N-CH 100V 165A ISOPLUS247 | 116 More on Order |
URL Link
www.oemstron.com/datasheet/IXFR180N10
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 165A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 400nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V FET Feature - Power Dissipation (Max) 400W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |