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IXFR18N90P Datasheet

IXFR18N90P Cover
DatasheetIXFR18N90P
File Size105.25 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFR18N90P
Description MOSFET N-CH 900V ISOPLUS247

IXFR18N90P - IXYS

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IXFR18N90P IXFR18N90P IXYS MOSFET N-CH 900V ISOPLUS247 184

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URL Link

IXFR18N90P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

660mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

97nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5230pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™