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| Datasheet | IXFR32N100P |
| File Size | 107.95 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFR32N100P |
| Description | MOSFET N-CH 1000V 18A ISOPLUS247 |
IXFR32N100P - IXYS
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IXFR32N100P | IXYS | MOSFET N-CH 1000V 18A ISOPLUS247 | 427 More on Order |
URL Link
www.oemstron.com/datasheet/IXFR32N100P
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 340mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V FET Feature - Power Dissipation (Max) 320W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |