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| Datasheet | IXFR32N100Q3 |
| File Size | 142.33 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFR32N100Q3 |
| Description | MOSFET N-CH 1000V 23A ISOPLUS247 |
IXFR32N100Q3 - IXYS
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IXFR32N100Q3 | IXYS | MOSFET N-CH 1000V 23A ISOPLUS247 | 549 More on Order |
URL Link
www.oemstron.com/datasheet/IXFR32N100Q3
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 9940pF @ 25V FET Feature - Power Dissipation (Max) 570W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case TO-247-3 |