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| Datasheet | IXFR58N20 |
| File Size | 91.07 KB |
| Total Pages | 2 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFR58N20 |
| Description | MOSFET N-CH 200V 50A ISOPLUS247 |
IXFR58N20 - IXYS
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IXFR58N20 | IXYS | MOSFET N-CH 200V 50A ISOPLUS247 | 170 More on Order |
URL Link
www.oemstron.com/datasheet/IXFR58N20
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 29A, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |