
Datasheet | IXFR80N10Q |
File Size | 37.91 KB |
Total Pages | 2 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IXFR80N10Q |
Description | MOSFET N-CH 100V 76A ISOPLUS247 |
IXFR80N10Q - IXYS


The Products You May Be Interested In
![]() |
IXFR80N10Q | IXYS | MOSFET N-CH 100V 76A ISOPLUS247 | 373 More on Order |
URL Link
www.oemstron.com/datasheet/IXFR80N10Q
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 76A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |