Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFT320N10T2 |
| File Size | 185.74 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFT320N10T2 |
| Description | MOSFET N-CH 100V 320A TO-26 |
IXFT320N10T2 - IXYS
The Products You May Be Interested In
 |
IXFT320N10T2 | IXYS | MOSFET N-CH 100V 320A TO-26 | 333 More on Order |
URL Link
www.oemstron.com/datasheet/IXFT320N10T2
|
Manufacturer IXYS Series GigaMOS™, HiPerFET™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 320A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 26000pF @ 25V FET Feature - Power Dissipation (Max) 1000W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |