Datasheet | IXFT60N50P3 |
File Size | 176.29 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXFT60N50P3, IXFQ60N50P3, IXFH60N50P3 |
Description | MOSFET N-CH 500V 60A TO268, MOSFET N-CH 500V 60A TO3P, MOSFET N-CH 500V 60A TO247 |
IXFT60N50P3 - IXYS
The Products You May Be Interested In
IXFT60N50P3 | IXYS | MOSFET N-CH 500V 60A TO268 | 305 More on Order |
|
IXFQ60N50P3 | IXYS | MOSFET N-CH 500V 60A TO3P | 314 More on Order |
|
IXFH60N50P3 | IXYS | MOSFET N-CH 500V 60A TO247 | 3072 More on Order |
URL Link
IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6250pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |