Datasheet | IXFT80N20Q |
File Size | 70.59 KB |
Total Pages | 2 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXFT80N20Q, IXFK80N20Q, IXFH80N20Q |
Description | MOSFET N-CH 200V 80A TO-268, MOSFET N-CH 200V 80A TO-264AA, MOSFET N-CH 200V 80A TO-247AD |
IXFT80N20Q - IXYS
The Products You May Be Interested In
IXFT80N20Q | IXYS | MOSFET N-CH 200V 80A TO-268 | 428 More on Order |
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IXFK80N20Q | IXYS | MOSFET N-CH 200V 80A TO-264AA | 447 More on Order |
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IXFH80N20Q | IXYS | MOSFET N-CH 200V 80A TO-247AD | 347 More on Order |
URL Link
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |