Datasheet | IXFV18N60PS |
File Size | 172.37 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXFV18N60PS, IXFV18N60P, IXFH18N60P |
Description | MOSFET N-CH 600V 18A PLUS220-SMD, MOSFET N-CH 600V 18A PLUS220, MOSFET N-CH 600V 18A TO-247 |
IXFV18N60PS - IXYS
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IXFV18N60PS | IXYS | MOSFET N-CH 600V 18A PLUS220-SMD | 211 More on Order |
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IXFH18N60P | IXYS | MOSFET N-CH 600V 18A TO-247 | 311 More on Order |
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IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PLUS-220SMD Package / Case PLUS-220SMD |
IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS220 Package / Case TO-220-3, Short Tab |
IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |