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Datasheet | IXFX120N25P |
File Size | 123.15 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IXFX120N25P, IXFK120N25P |
Description | MOSFET N-CH 250V 120A PLUS247, MOSFET N-CH 250V 120A TO-264 |
IXFX120N25P - IXYS
![IXFX120N25P Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/ixfx120n25p-0001.jpg)
![IXFX120N25P Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/ixfx120n25p-0002.jpg)
![IXFX120N25P Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/ixfx120n25p-0003.jpg)
![IXFX120N25P Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/ixfx120n25p-0004.jpg)
![IXFX120N25P Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/ixfx120n25p-0005.jpg)
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URL Link
Manufacturer IXYS Series PolarHT™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V FET Feature - Power Dissipation (Max) 700W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
Manufacturer IXYS Series PolarHT™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V FET Feature - Power Dissipation (Max) 700W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |