Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFX24N100 |
| File Size | 133.75 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXFX24N100, IXFK24N100 |
| Description | MOSFET N-CH 1000V 24A PLUS 247, MOSFET N-CH 1KV 24A TO-264AA |
IXFX24N100 - IXYS
The Products You May Be Interested In
 |
IXFX24N100 | IXYS | MOSFET N-CH 1000V 24A PLUS 247 | 430 More on Order |
 |
IXFK24N100 | IXYS | MOSFET N-CH 1KV 24A TO-264AA | 394 More on Order |
URL Link
|
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 390mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 267nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 390mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 267nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |