Datasheet | IXFX64N50P |
File Size | 225.3 KB |
Total Pages | 4 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IXFX64N50P, IXFK64N50P |
Description | MOSFET N-CH 500V 64A PLUS247, MOSFET N-CH 500V 64A TO-264 |
IXFX64N50P - IXYS
The Products You May Be Interested In
IXFX64N50P | IXYS | MOSFET N-CH 500V 64A PLUS247 | 148 More on Order |
|
IXFK64N50P | IXYS | MOSFET N-CH 500V 64A TO-264 | 329 More on Order |
URL Link
IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 64A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 85mOhm @ 32A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V FET Feature - Power Dissipation (Max) 830W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 64A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 85mOhm @ 32A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V FET Feature - Power Dissipation (Max) 830W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |