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| Datasheet | IXKC19N60C5 |
| File Size | 114.77 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXKC19N60C5 |
| Description | MOSFET N-CH 600V 19A ISOPLUS220 |
IXKC19N60C5 - IXYS
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IXKC19N60C5 | IXYS | MOSFET N-CH 600V 19A ISOPLUS220 | 210 More on Order |
URL Link
www.oemstron.com/datasheet/IXKC19N60C5
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Manufacturer IXYS Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 16A, 10V Vgs(th) (Max) @ Id 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V FET Feature Super Junction Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |