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IXKP10N60C5M Datasheet

IXKP10N60C5M Cover
DatasheetIXKP10N60C5M
File Size97.83 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXKP10N60C5M
Description MOSFET N-CH 600V 5.4A TO220ABFP

IXKP10N60C5M - IXYS

IXKP10N60C5M Datasheet Page 1
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IXKP10N60C5M IXKP10N60C5M IXYS MOSFET N-CH 600V 5.4A TO220ABFP 121

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URL Link

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

385mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ABFP

Package / Case

TO-220-3 Full Pack, Isolated Tab