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IXKP35N60C5 Datasheet

IXKP35N60C5 Cover
DatasheetIXKP35N60C5
File Size113.89 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXKP35N60C5
Description MOSFET N-CH 600V 35A TO-220AB

IXKP35N60C5 - IXYS

IXKP35N60C5 Datasheet Page 1
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URL Link

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 100V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3