Datasheet | IXTA02N250 |
File Size | 239.07 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTA02N250, IXTV02N250S, IXTH02N250 |
Description | MOSFET N-CH 2500V 0.2A TO263, MOSFET N-CH 2500V .2A PLUS220, MOSFET N-CH 2500V 0.2A TO247 |
IXTA02N250 - IXYS
The Products You May Be Interested In
IXTA02N250 | IXYS | MOSFET N-CH 2500V 0.2A TO263 | 479 More on Order |
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IXTV02N250S | IXYS | MOSFET N-CH 2500V .2A PLUS220 | 494 More on Order |
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IXTH02N250 | IXYS | MOSFET N-CH 2500V 0.2A TO247 | 393 More on Order |
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IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2500V Current - Continuous Drain (Id) @ 25°C 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450Ohm @ 50mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 116pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2500V Current - Continuous Drain (Id) @ 25°C 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450Ohm @ 50mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 116pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PLUS-220SMD Package / Case PLUS-220SMD |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2500V Current - Continuous Drain (Id) @ 25°C 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450Ohm @ 50mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 116pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |