Datasheet | IXTA08N50D2 |
File Size | 177.75 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTA08N50D2, IXTP08N50D2, IXTY08N50D2 |
Description | MOSFET N-CH 500V 800MA D2PAK, MOSFET N-CH 500V 800MA TO220AB, MOSFET N-CH 500V 800MA DPAK |
IXTA08N50D2 - IXYS
The Products You May Be Interested In
IXTA08N50D2 | IXYS | MOSFET N-CH 500V 800MA D2PAK | 411 More on Order |
|
IXTP08N50D2 | IXYS | MOSFET N-CH 500V 800MA TO220AB | 703 More on Order |
|
IXTY08N50D2 | IXYS | MOSFET N-CH 500V 800MA DPAK | 7755 More on Order |
URL Link
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 4.6Ohm @ 400mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 312pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 4.6Ohm @ 400mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 312pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 4.6Ohm @ 400mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 312pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |