Datasheet | IXTA15N50L2 |
File Size | 168.78 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTA15N50L2, IXTP15N50L2, IXTH15N50L2 |
Description | MOSFET N-CH 500V 15A TO-263, MOSFET N-CH 500V 15A TO-220, MOSFET N-CH 500V 15A TO-247 |
IXTA15N50L2 - IXYS
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IXTA15N50L2 | IXYS | MOSFET N-CH 500V 15A TO-263 | 139 More on Order |
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IXTP15N50L2 | IXYS | MOSFET N-CH 500V 15A TO-220 | 574 More on Order |
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IXTH15N50L2 | IXYS | MOSFET N-CH 500V 15A TO-247 | 506 More on Order |
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IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4080pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4080pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4080pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |