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IXTA1R6N50D2 Datasheet

IXTA1R6N50D2 Cover
DatasheetIXTA1R6N50D2
File Size179.63 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts IXTA1R6N50D2, IXTY1R6N50D2, IXTP1R6N50D2
Description MOSFET N-CH 500V 1.6A D2PAK, MOSFET N-CH 500V 1.6A DPAK, MOSFET N-CH 500V 1.6A TO220AB

IXTA1R6N50D2 - IXYS

IXTA1R6N50D2 Datasheet Page 1
IXTA1R6N50D2 Datasheet Page 2
IXTA1R6N50D2 Datasheet Page 3
IXTA1R6N50D2 Datasheet Page 4
IXTA1R6N50D2 Datasheet Page 5

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URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3Ohm @ 800mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

23.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

2.3Ohm @ 800mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

23.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

2.3Ohm @ 800mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

23.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3