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| Datasheet | IXTB30N100L |
| File Size | 147.09 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTB30N100L |
| Description | MOSFET N-CH 1000V 30A PLUS264 |
IXTB30N100L - IXYS
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IXTB30N100L | IXYS | MOSFET N-CH 1000V 30A PLUS264 | 478 More on Order |
URL Link
www.oemstron.com/datasheet/IXTB30N100L
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 20V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 545nC @ 20V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 25V FET Feature - Power Dissipation (Max) 800W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA |