Datasheet | IXTC160N10T |
File Size | 187.7 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IXTC160N10T |
Description | MOSFET N-CH 100V 83A ISOPLUS220 |
IXTC160N10T - IXYS
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IXTC160N10T | IXYS | MOSFET N-CH 100V 83A ISOPLUS220 | 146 More on Order |
URL Link
www.oemstron.com/datasheet/IXTC160N10T
IXYS Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 83A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |