Datasheet | IXTH120P065T |
File Size | 189.75 KB |
Total Pages | 6 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTH120P065T, IXTA120P065T, IXTP120P065T |
Description | MOSFET P-CH 65V 120A TO-247, MOSFET P-CH 65V 120A TO-263, MOSFET P-CH 65V 120A TO-220 |
IXTH120P065T - IXYS
The Products You May Be Interested In
IXTH120P065T | IXYS | MOSFET P-CH 65V 120A TO-247 | 107 More on Order |
|
IXTA120P065T | IXYS | MOSFET P-CH 65V 120A TO-263 | 374 More on Order |
|
IXTP120P065T | IXYS | MOSFET P-CH 65V 120A TO-220 | 392 More on Order |
URL Link
IXYS Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 65V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 25V FET Feature - Power Dissipation (Max) 298W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
IXYS Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 65V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 25V FET Feature - Power Dissipation (Max) 298W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXYS Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 65V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 25V FET Feature - Power Dissipation (Max) 298W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |