![IXTH32P20T Cover](http://media.oemstron.com/oemstron/datasheet/sm/ixth32p20t-0001.jpg)
Datasheet | IXTH32P20T |
File Size | 241.02 KB |
Total Pages | 7 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTH32P20T, IXTA32P20T, IXTP32P20T |
Description | MOSFET P-CH 200V 32A TO-247, MOSFET P-CH 200V 32A TO-263, MOSFET P-CH 200V 32A TO-220 |
IXTH32P20T - IXYS
![IXTH32P20T Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/ixth32p20t-0001.jpg)
![IXTH32P20T Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/ixth32p20t-0002.jpg)
![IXTH32P20T Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/ixth32p20t-0003.jpg)
![IXTH32P20T Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/ixth32p20t-0004.jpg)
![IXTH32P20T Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/ixth32p20t-0005.jpg)
![IXTH32P20T Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/ixth32p20t-0006.jpg)
![IXTH32P20T Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/ixth32p20t-0007.jpg)
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IXTA32P20T | IXYS | MOSFET P-CH 200V 32A TO-263 | 443 More on Order |
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IXTP32P20T | IXYS | MOSFET P-CH 200V 32A TO-220 | 159 More on Order |
URL Link
Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |