Datasheet | IXTH40N50L2 |
File Size | 191.13 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTH40N50L2, IXTQ40N50L2, IXTT40N50L2 |
Description | MOSFET N-CH 500V 40A TO-247, MOSFET N-CH 500V 40A TO-3P, MOSFET N-CH 500V 40A TO-268 |
IXTH40N50L2 - IXYS
The Products You May Be Interested In
IXTH40N50L2 | IXYS | MOSFET N-CH 500V 40A TO-247 | 406 More on Order |
|
IXTQ40N50L2 | IXYS | MOSFET N-CH 500V 40A TO-3P | 357 More on Order |
|
IXTT40N50L2 | IXYS | MOSFET N-CH 500V 40A TO-268 | 420 More on Order |
URL Link
IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |