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Datasheet | IXTH52P10P |
File Size | 182.03 KB |
Total Pages | 6 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | IXTH52P10P, IXTP52P10P, IXTA52P10P, IXTQ52P10P |
Description | MOSFET P-CH 100V 52A TO-247, MOSFET P-CH 100V 52A TO-220, MOSFET P-CH 100V 52A TO-263, MOSFET P-CH 100V 52A TO-3P |
IXTH52P10P - IXYS
![IXTH52P10P Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/ixth52p10p-0001.jpg)
![IXTH52P10P Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/ixth52p10p-0002.jpg)
![IXTH52P10P Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/ixth52p10p-0003.jpg)
![IXTH52P10P Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/ixth52p10p-0004.jpg)
![IXTH52P10P Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/ixth52p10p-0005.jpg)
![IXTH52P10P Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/ixth52p10p-0006.jpg)
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URL Link
Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2845pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2845pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2845pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 50mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2845pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |